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* www.irf.com 1 gds gate drain source to-220ab AUIRF6215 s d g d description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit com- bined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recover y dv/dt v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.4 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 -5.0 11 310 -6.6 110 0.71 20 max. -13 -9.0 -44 -55 to + 175 300 10 lbf in (1.1n m) hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss -150v r ds(on) max. 0.29 ? i d -13a s d g automotive grade

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* % 4'() 5 62 7 r is measured at tj approximately 90c. s d g s d g s tat i c el ectr i ca l ch aracter i st i cs @ t j = 2 5 c ( un l ess ot h erw i se spec ifi e d) parameter min. t y p. max. units v (br)dss drain-to-source breakdown volta g e -150 ??? ??? v ? v (br)dss / ? t j breakdown volta g e temp. coefficient ??? -0.20 ??? v/c r ds(on) static drain-to-source on-resistance ??? ??? 0.29 ? ??? ??? 0.58 v gs(th) gate threshold volta g e -2.0 ??? -4.0 v g fs forward transconductance 3.6 ??? ??? s i dss drain-to-source leaka g e current ??? ??? -25 a ??? ??? -250 i gss gate-to-source forward leaka g e ??? ??? 100 na gate-to-source reverse leaka g e ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units q g total gate char g e ??? ??? 66 q gs gate-to-source char g e ??? ??? 8.1 nc q gd gate-to-drain ("miller") char g e ??? ??? 35 t d(on) turn-on dela y time ???14??? t r rise time ???36??? t d(off) turn-off dela y time ???53???ns t f fall time ???37??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from packa g e and center of die contact c iss input capacitance ??? 860 ??? c oss output capacitance ??? 220 ??? pf c rss reverse transfer capacitance ??? 130 ??? diode characteristics parameter min. t y p. max. units i s continuous source current ??? ??? -13 (body diode) a i sm pulsed source current ??? ??? -44 (body diode) v sd diode forward volta g e ??? ??? -1.6 v t rr reverse recover y time ??? 160 240 ns q rr reverse recover y char g e ??? 1.2 1.7 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = -10v, i d = -6.6a ,t j =150c conditions v gs = -10v, see fig. 6 & 13 v dd = -75v i d = -6.6a r g = 6.8 ? t j = 25c, i s = -6.6a, v gs = 0v t j = 25c, i f = -6.6a di/dt = 100a/ s conditions v gs = 0v, i d = -250a reference to 25c, i d = -1ma v gs = -10v, i d = -6.6a ,t j =25c v ds = v gs , i d = -250a v ds = -150v, v gs = 0v v ds = -120v, v gs = 0v, t j = 150c mosfet symbol showing the integral reverse p-n junction diode. v ds = -50v, i d = -6.6a i d = -6.6a v ds = -120v conditions r d = 12 ?, see fig. 10 v gs = 0v v ds = -25v ? = 1.0mhz, see fig. 5 v gs = 20v v gs = -20v

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$ % &$'()(*# * " qualification information ? to-220 n/a qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (1125v) aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m3 (400v) aec-q101-002 human body model class h1b (1000v) aec-q101-001
+# ,- ."/# /0 - ' 1 /0 - ' 1 /0 / ' 1 10 100 1 10 100 d ds 20s pulse width t = 25c c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 1 10 100 1 10 100 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20s pulse width t = 175c c 1 10 100 45678910 t = 25c j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) t = 175c j v = -50v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -11a d 8 8

2 %##3 - 4& /0 5 ' 4." 5 3. 4 /0 ' ." 3. 4 /0 3 6 . 4 0 4 8 12 16 20 0 20406080 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) for test circuit see figure 13 i = -6.6a v = -120v v = -75v v = -30v d ds ds ds 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 t = 25c j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) t = 175c j 1 10 100 1 10 100 1000 operation in this area limited by r ds(on) 10ms a -i , drain current (a) -v , drain-to-source voltage (v) ds d 10s 100s 1ms t = 25c t = 175c single pulse c j 0 400 800 1200 1600 2000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss
34/#/' 34/#7 8# 2 %##$8/ /# # 19' 2 %## '." ' /# 3 /3 1 0.1 % 3 3 9:% + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 175 0 3 6 9 12 15 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
5 ' 4/' : 5 ' 47 8# 2 %##&8 $40 ." ' q g q gs q gd v g charge (). d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - ; # 87 8# ; # 8/' t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v 0 200 400 600 800 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) i top -2.7a -4.7a bottom -6.6a d

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 3 ? ? . 91 ;9; ? 9:%/9 : %
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ordering information base part number package type standard pack complete part number form quantit y AUIRF6215 to-220 tube 50 AUIRF6215

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